mar.2002 1. 2. 3. 4. 5. 6. 7. 8. 9. v v v v v v v 10. 11. 12. 13. 14. 15. 16. u u vv w w wpc upi vpi wpi nc ni p n p p n n upc f o v vpc 17. 18. 19. nc o wf o vf o uf ac r b a y y c e v f w m m s z d z j q q t h ac w w w ah ah g 10 12 n v b p w u z y z y ab - thd (6 typ.) aa - dia. (4 typ.) 3 ae (15 typ.) 45678911 12 14 16 18 13 15 17 19 p af ag x ad n l k u 2.54 mm dia. (2 typ.) 0.5 mm sq. pin (19 typ.) gnd gnd si out in f o v cc gnd gnd si out in f o v cc gnd gnd si out in f o v cc gnd gnd si out in f o v cc f o br v nc w n v n u n v n1 p u v w n b temp th v wpc w p v wp1 gnd in v cc gnd si out w fo f o v vpc v p v vp1 gnd in v cc gnd si out v fo f o v upc u p v up1 gnd in v cc gnd si out u fo f o rfo 13 17 18 14 11 7 1 19 16 10 5 8 9 12 6 4 3 2 15 description: mitsubishi intelligent power mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20khz. built-in control circuits pro- vide optimum gate drive and pro- tection for the igbt and free-wheel diode power devices. features: complete output power circuit gate drive circuit protection logic short circuit over current over temperature under voltage applications: inverters ups motion/servo control power supplies ordering information: example: select the complete part number from the table below -i.e. PM200RSA060 is a 600v, 200 ampere intelligent power mod- ule. type current rating v ces amperes volts (x 10) pm 200 60 dimensions inches millimeters a 5.31 0.04 135.0 1.0 b 4.74 0.02 120.5 0.5 c 4.33 0.04 110.0 1.0 d 4.27 10.5 e 3.76 0.02 95.5 0.5 f 3.29 83.5 g 2.01 51.0 h 1.602 40.68 j 1.54 39.0 k 1.37 34.7 l 1.33 33.7 m 1.02 26.0 n 0.95 +0.06/-0.0 24.1 +1.5/-0.0 p 0.84 21.3 q 0.79 20.0 r 0.780 19.82 dimensions inches millimeters s 0.69 17.5 t 0.65 16.5 u 0.52 13.2 v 0.43 11.0 w 0.39 10.0 x 0.31 8.0 y 0.285 7.25 z 0.24 6.0 aa 0.22 dia. dia. 5.5 ad metric m5 m5 ac 0.128 3.22 ad 0.10 2.6 ae 0.08 2.0 af 0.07 1.8 ag 0.06 1.6 ah 0.02 0.5 mitsubishi intelligent power modules PM200RSA060 flat-base type insulated package outline drawing and circuit diagram
mar.2002 mitsubishi intelligent power modules PM200RSA060 flat-base type insulated package absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c case operating temperature t c -20 to 100 c mounting torque, m5 mounting screws 1.47 ~ 1.96 n m mounting torque, m5 main terminal screw 1.47 ~ 1.96 n m module weight (typical) 920 grams supply voltage protected by oc and sc (v d = 13.5 - 16.5v, inverter part, t j = 125 c) v cc(prot.) 400 volts isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms control sector supply voltage (applied between v up1 -v upc , v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc )v d 20 volts input voltage (applied between u p -v upc , v p -v vpc , w p -v wpc , u n v n w n b r -v nc )v cin 20 volts fault output supply voltage (applied between u fo -v upc , v fo -v vpc , w fo -v wpc , f o -v nc ) v fo 20 volts fault output current (sink current of u fo , v fo , w fo and f o terminal) i fo 20 ma igbt inverter sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 600 volts collector current, i c 200 amperes peak collector current, i cp 400 amperes supply voltage (applied between p - n) v cc 450 volts supply voltage, surge (applied between p - n) v cc(surge) 500 volts collector dissipation p c 595 watts brake sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 600 volts collector current, (t c = 25 c) i c 75 amperes peak collector current, (t c = 25 c) i cp 150 amperes supply voltage (applied between p - n) v cc 450 volts supply voltage, surge (applied between p - n) v cc(surge) 500 volts collector dissipation p c 370 watts diode forward current i f 75 amperes diode dc reverse voltage v r(dc) 600 volts
mar.2002 mitsubishi intelligent power modules PM200RSA060 flat-base type insulated package electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units control sector over current trip level inverter part oc -20 c t 125 c, v d = 15v 310 400 amperes over current trip level brake part 115 161 amperes short circuit trip level inverter part sc -20 c t 125 c, v d = 15v 560 amperes short circuit trip level brake part 241 amperes over current delay time t off(oc) v d = 15v 10 s over temperature protection ot trip level 111 118 125 c ot r reset level 100 c supply circuit under voltage protection uv trip level 11.5 12.0 12.5 volts uv r reset level 12.5 volts supply voltage v d applied between v up1 -v upc , 13.5 15 16.5 volts v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc circuit current i d v d = 15v, v cin = 15v, v n1 -v nc 52 72 ma v d = 15v, v cin = 15v, v xp1 -v xpc 13 18 ma input on threshold voltage v th(on) applied between 1.2 1.5 1.8 volts input off threshold voltage v th(off) u p -v upc , v p -v vpc , w p -v wpc , 1.7 2.0 2.3 volts u n v n w n b r -v nc pwm input frequency f pwm 3- sinusoidal 15 20 khz fault output current i fo(h) v d = 15v, v fo = 15v 0.01 ma i fo(l) v d = 15v, v fo = 15v 10 15 ma minimum fault output pulse width t fo v d = 15v 1.0 1.8 ms
mar.2002 mitsubishi intelligent power modules PM200RSA060 flat-base type insulated package electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units igbt inverter sector collector cutoff current i ces v ce = v ces , t j = 25 c 1.0 ma v ce = v ces , t j = 125 c 10 ma diode forward voltage v ec -i c = 200a, v d = 15v, v cin = 5v 1.9 2.8 volts collector-emitter saturation voltage v ce(sat) v d = 15v, i cin = 0v, i c = 200a 1.8 2.7 volts v d = 15v, v cin = 0v, i c = 200a, 1.75 2.63 volts t j = 125 c inductive load switching times t on 0.4 0.8 2.0 s t rr v d = 15v, v cin = 0 ? 15v 0.15 0.3 s t c(on) v cc = 300v, i c = 200a 0.4 1.0 s t off t j = 125 c 2.0 2.9 s t c(off) 0.6 1.2 s brake sector collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 75a, 1.8 2.7 volts t j = 25 c v d = 15v, v cin = 0v, i c = 75a, 1.85 2.78 volts t j = 125 c diode forward voltage v fm i f = 75a, v d = 15v, v cin = 5v 1.7 2.5 volts collector cutoff current i ces v ce = v ces , t j = 25 c 1ma v ce = v ces , t j = 125 c 10 ma thermal characteristics characteristic symbol condition min. typ. max. units junction to case thermal resistance r th(j-c)q each inverter igbt 0.21 c/watt r th(j-c)f each inverter fwdi 0.35 c/watt r th(j-c)q brake igbt 0.33 c/watt r th(j-c)f brake fwdi 0.80 c/watt contact thermal resistance r th(c-f) case to fin per module, 0.018 c/watt thermal grease applied recommended conditions for use characteristic symbol condition value units supply voltage v cc applied across p-n terminals 0 ~ 400 volts v d applied between v up1 -v upc , 15 1.5 volts v n1 -v nc , v vp1 -v vpc , v wp1 -v wpc input on voltage v cin(on) applied between 0 ~ 0.8 volts input off voltage v cin(off) u p -v upc , v p -v vpc , w p -v wpc , 4.0 ~ v d volts u n v n w n b r -v nc pwm input frequency f pwm using application circuit 5 ~ 20 khz minimum dead time t dead input signal 2.5 s
mar.2002 mitsubishi intelligent power modules PM200RSA060 flat-base type insulated package 0 1 2 3 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) 0 100 300 200 v d = 15v t j = 25 o c t j = 125 o c v cin = 0v 0 1 2 collector-emitter saturation voltage characteristics (typical) supply voltage, v d , (volts) collector-emitter saturation voltage v ce(sat) , (volts) 20 3 0 22 18 16 14 12 i c = 200a t j = 25 o c t j = 125 o c v cin = 0v output characteristics (typical) collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) 012 0 3 100 200 300 t j = 25 o c v cin = 0v v d = 17v 15 13 10 1 10 2 10 3 10 -1 collector current, i c , (amperes) switching times, t on , t off , ( s) switching time vs. collector current (typical) t on 10 0 10 1 t off v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 1 10 2 10 3 10 -1 collector current, i c , (amperes) switching times, t c(on) , t c(off) , ( s) switching time vs. collector current (typical) t c(on) 10 0 10 1 t c(off) v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 1 10 2 10 3 10 -2 collector reverse current, ? c , (amperes) reverse recovery time, t rr , ( s) reverse recovery current vs. collector current (typical) 10 -1 10 0 v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 0 reverse recovery current, i rr , (amperes) 10 1 10 2 i rr t rr 0.4 1.2 2.4 10 1 emitter-collector voltage, v ec , (volts) collector reverse current, ? c , (amperes) diode forward characteristics 10 2 10 3 0.8 1.6 2.0 t j = 25 o c t j = 125 o c v d = 15v v cin = 15v 10 20 60 100 over current trip level vs. supply voltage (typical) supply voltage, v d , (volts) over current trip level % (normalized) 12 014161820 t j = 25 o c 0 120 40 80 0 40 60 120 over current trip level temperature dependency (typical) junction temperature, t j , ( o c) over current trip level % (normalized) 0 50 100 150 -50 v d = 15v 100 80 inverter part
mar.2002 mitsubishi intelligent power modules PM200RSA060 flat-base type insulated package 0 40 60 80 100 120 fault output pulse width vs. temperature (typical) junction temperature, t j , ( o c) fault output pulse width % (normalized) -50 0 50 100 150 v d = 15v 11 12 13 14 15 control supply voltage trip-reset level temperature dependency (typical) junction temperature, t j , ( o c) uv trip-reset level, uv t , uv r , (volts) -50 150 050 100 uv t uv r 0 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)q = 0.21 o c/w 10 -2 10 -3 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)f = 0.35 o c/w 10 -2 10 -3 inverter part
mar.2002 mitsubishi intelligent power modules PM200RSA060 flat-base type insulated package brake part time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)q = 0.33 o c/w 10 -2 10 -3 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)f = 0.8 o c/w 10 -2 10 -3 0 0.4 0.8 10 0 10 1 10 2 diode forward voltage, v f , (volts) diode forward current, i f , (amperes) 1.2 2.0 1.6 v d = 15v t j = 25 o c t j = 125 o c diode forward characteristics 0 1.0 2.0 3.0 collector-emitter saturation voltage characteristics (typical) supply voltage, v d , (volts) 01214161820 0.5 1.5 2.5 t j = 25 o c v cin = 0v collector-emitter saturation voltage v ce(sat) , (volts) 0 1.0 2.0 3.0 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) 0 100 60 0.5 2.5 1.5 20 40 80 v d = 15v v cin = 0v t j = 25 o c t j = 125 o c 012 0 20 output characteristics (typical) collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) 3 40 60 100 80 4 t j = 25 o c v cin = 0v v d = 17v 15 13
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